Metrology solutions using optical scatterometry for advanced CMOS: III-V and Germanium multi-gate field-effect transistors
2013
In this work, we report metrology solutions using scatterometry Optical Critical Dimension (OCD)
characterization on two advanced CMOS devices: novel n-channel gate-last In 0.53 Ga 0.47 As FinFET with
self-aligned Molybdenum (Mo) contacts and p-channel Ge FinFET formed on Germanium-on-Insulator
(GOI) substrate. Key critical process steps during the fabrication of these advanced transistors were
identified for process monitor using scatterometry OCD measurement to improve final yield. Excellent
correlation with reference metrology and high measurement precision were achieved by using OCD
characterization, confirming scatterometry OCD as a promising metrology technique for next generation
device applications. In addition, we also further explore OCD characterization using normal incidence
spectroscopic reflectometry (SR), oblique incidence spectroscopic ellipsometry (SE), and combined SR+SE
technologies. The combined SR+SE approach was found to provide better precision.
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