Prospects of In/CdTe X- and γ-ray detectors with MoO Ohmic contacts

The present paper analyzes the сharge transport mechanisms and spectrometric properties of In/CdTe/MoO x heterojunctions prepared by magnetron sputtering of indium and molybdenum oxide thin films onto semi-insulating p -type single-crystal CdTe semiconductor, produced by Acrorad Co. Ltd. Current-voltage characteristics of the detectors at different temperatures were investigated. The charge transport mechanisms in the heterostructures under investigation were determined: the generation-recombination in the space charge region (SCR) at relatively low voltages and the space charge limited currents at high voltages. The spectra of 137 Cs and 241 Am isotopes taken at different applied bias voltages are presented. It is shown that the In/CdTe/MoOx structures can be used as X/γ-ray detectors in the spectrometric mode.