Effects of n-butyl amine incorporation on the performance of perovskite light emitting diodes

The efficiency of perovskite light emitting diodes (PeLEDs) is crucially limited by leakage current and nonradiative recombination. Here we introduce n-butyl amine (BA) to modulate the growth of perovskite films as well as improve the performance of PeLEDs, and investigate in detail the effects of BA incorporation on the structural, optical, and electrical characteristics of perovskite films. The results indicate that BA would terminate the grain surface and inhibit crystal growth, leading to increased radiative recombination. However, BA overload would make the films loose and recreate shunt paths. The electrical detriment of BA overload outweighs its optical benefit. As a result, optimal PeLEDs can be obtained only with moderate BA incorporation.