Electron beam induced current study of ion beam milling type conversion in molecular beam epitaxy vacancy-doped CdxHg1−xTe

Ion milling has been used to type convert molecular beam epitaxy vacancy-doped CdxHg1−xTe, and electron beam induced current measurements have been performed to study the pn-junction depth dependence on milling time, milling current and vacancy concentration. The junction depth seems to initially increase linearly with time for depths up to ∼ 4 µm, then possibly as the square root of time at larger depth. For given x, the depth increases with decreasing vacancy concentration. For the same annealing temperature, high x samples have lower carrier concentration and greater junction depth than low x samples. Up to 4 µm, junction depth is proportional to milling current density as well as milling time.