Room-temperature RF magnetron sputtering deposition of hydrogenated Ga-doped ZnO thin films on PET substrates for PDLC devices

In this work, hydrogenated gallium-doped zinc oxide (HGZO) thin films were deposited on polyethylene terephthalate substrates at room temperature by RF magnetron sputtering. The effects of RF power and Ar + H2 flow rate on electrical and optical properties of HGZO thin films were investigated systematically. All of HGZO thin films exhibited a high average transmittance of about 77.3–82.9% in the visible range, and the minimum resistivity value reached 7.1 × 10− 4 Ω·cm. Potential application of polymer-dispersed liquid crystal device based on HGZO thin film was also successfully demonstrated.