Novel Plasma Control Method in PECVD for Preparing Microcrystalline Silicon

A novel plasma enhanced vapor deposition (PECVD) technique employing biased wall (BW) method has been developed for the enhanced growth rate of the hydrogenated microcrystalline silicon ({micro}c-Si:H) films. Using this method, the authors have achieved a growth rate of more than 6{angstrom}/sec for the formation of {micro}c-Si:H having an average grain size of 200{angstrom} at 350 C.