Band offset measurements for AlSb/ZnTe heterojunctions

Core level photoemission measurements have been made for thin (40 A) AlSb heterojunctions grown on ZnTe. The room temperature valence band offset we obtain is 0.35±0.11 eV and the heterojunction is type I (electrons and holes confined in AlSb). The Γ(ZnTe)–Δ(AlSb) conduction‐band offset would then be 0.28 eV. The AlSb growth temperature was reduced to 325 °C in order to suppress interfacial reactions. Raman scattering indicates good crystalline quality for this growth temperature. Heterojunctions annealed in vacuo at 375 °C exhibit interfacial reactions which liberate elemental Te or possibly Al2Te3.