Influence of $hboxO_2$ Flow Rate on Structure and Properties of $hboxMgO_x$ Films Prepared by Cathodic-Vacuum-Arc Ion Deposition System

Magnesium-oxide (MgO x ) films have been prepared by a cathodic-vacuum-arc ion deposition system operated in an intermediate frequency pulse mode of substrate bias voltage at a mixed atmosphere of O 2 and Ar. The O 2 flow was adjusted in a range of 180-240 sccm at a fixed O 2 /Ar flow rate of 20. The structure, composition, morphology, and optical properties of the samples were analyzed by X-ray diffraction, Rutherford backscattering technique, atomic force microscopy, and UV-visible absorption spectra, respectively. Results show that the crystal orientation and grain size of the samples strongly depends on O 2 flow rate. Growth of Magnesium-oxide films prefers MgO (200) and MgO (220) orientation at a smaller and larger O 2 flow rate of 180 and 220 sccm, respectively. Transparent MgO x films used as the protective layer for alternating-current plasma display panel are obtained at optimal deposition conditions