Normal temperature bonding device, wafer having normal temperature bonding device, and normal temperature bonding method

This normal temperature bonding device is provided with a first substrate having a first surface and a second substrate having a second surface that is bonded with the first surface. With respect to the bonding of the first surface and the second surface, one of the first surface and the second surface contains an inorganic material that is exemplified by silicon, SiO 2 , GaN or LiTaO 3 . The other one of the first surface and the second surface contains an inorganic material that is exemplified by silicon, SiO 2 , quartz or Au. The inorganic materials contained in the first surface and the second surface may be the same as each other or different from each other.