SiC-SiC temporary bonding compatible with rapid thermal annealing at 1000 °C

A SiC-SiC temporary bonding compatible with rapid thermal annealing at $\sim 1000^{\circ } \mathrm{C}$ has been realized. Two SiC wafers were bonded at room temperature via an intermediate Ni nano-film. After the rapid thermal annealing, the bonding was dramatically weakened and the de-bonding could be achieved at the interface. The mechanisms of this temporary bonding method has been investigated through interface analyses.