8 W continuous wave operation of InGaAsN lasers at 1.3 µm

The authors report on the generation of 8 W of optical power at 1.3 µm under continuous wave (CW) operation from a 100 µm aperture of an InGaAsN single quantum well laser. The laser was facet-coated and the active region maintained at 10°C by heatsinking. A preliminary lifetime test produced no noticeable degradation of laser characteristics after 1000 hours of CW operation at an output power of 1.5 W. Threshold current densities as low as 335 A/cm2 were measured on such broad area lasers. These values are a significant improvement over previously published data for lasers in the InGaAsN material system.