Evolution of microstructure in vanadium oxide bolometer film during annealing process

Abstract Vanadium oxide thin films were prepared through direct current magnetron reactive sputtering and post annealing process. The evolution of composition, microstructure, and electrical properties of as-deposited amorphous films during the annealing process was clarified by X-ray diffraction, scanning electron microscopy and temperature-dependent resistance measurement. A new composition of thin film was acquired which consisted of crystalline V 6 O 13 and amorphous phase. Sheet resistance and temperature coefficient of resistance (TCR) of the thin film are 90 kΩ/□ (measured at room temperature) and 2.52%/K, respectively. No metal-to-semiconductor transition was observed in the obtained film at temperatures ranging from room-temperature to 90 °C, suggesting the thin film is suitable for the application in microbolometer.