X-RAY PHOTOEMISSION STUDY OF PR THIN FILMS ON SI(111)

Abstract The electronic properties of the interface of the Pr/Si(111) system have been studied by means of X-ray photoemission (XPS) spectroscopy and low energy electron diffraction techniques. Main and satellite peaks corresponding to the f 2 (poorly screened) and f 3 (well-screened) final state have been observed in Pr 3 d XPS spectra. An enhancement of the well-screened peak at the Pr submonolayer coverage has suggested that the interaction between Pr and Si occurs from the very beginning of the deposition. A deconvolution of Si 2 p XPS spectra has revealed that two kinds of silicides have been formed at the interface by deposition at room temperature. Furthermore, it has been speculated that annealing the films at 780°C has led to only a single phase silicide for all Pr coverages.