Mean inelastic electron scattering potentials for Si and GaAs from dielectric matrix calculations

Abstract A first principles calculation of the inelastic electron mean inner-potential is presented for Si and GaAs as a function of incident energy. This work is based on a dielectric matrix calculation of the frequency and wave-vector dependent loss function determined in the RPA from non-local empirical pseudopotential electronic structure. Comparisons are made with the generalised oscillator strength models and experiment.