THM growth of (Cd, Mn)Te single crystal with the source ingot synthesized by VB method

Abstract The (Cd 0.9 , Mn 0.1 )Te crystal was grown by the Traveling Heater method (THM) from the indium-doped source ingot (Cd 0.9 , Mn 0.1 )Te which had been synthesized by the Vertical Bridgman (VB) method. The indium-doped (Cd 0.9 , Mn 0.1 )Te single crystal with the diameter of 31 mm and length of 130 mm was obtained. The variation of the Mn content was about ±1% along the length of (Cd, Mn)Te: In ingot, and the concentration of Te inclusions in the crystal was ~10 4  cm −3 with the average diameter of 8–12  μ m. Te solvent showed purifying effects during the THM crystal growth, and the indium dopant distributed along the crystal with the concentration of 6.8–10 ppm. IR transmittance and PL spectrum measurements revealed that the as-grown (Cd, Mn)Te crystal possessed high crystalline quality, and its resistivity was up to 6.2×10 9  Ω cm. Under the 59.5 keV 241 Am irradiation, the planar (Cd, Mn)Te detector showed an energy resolution of 12.7%.