Temperature-Dependent Minority-Carrier Mobility in p-Type InAs/GaSb Type-II-Superlattice Photodetectors

Type-II superlattices (T2SLs) of narrow-band-gap semiconductors hold great promise for mid- and long-wavelength infrared (IR) detectors. To improve photodiodes based on these superlattices, understanding of minority-carrier transport along the growth direction is required, yet still lacking. Here researchers use electron-beam-induced current and time-resolved microwave reflection to investigate the key transport properties in a midinfrared T2SL photodetector, presenting a comprehensive study of carrier dynamics and the effect of surface recombination in the structure. This work will help to optimize the design and growth of T2SL structures, for better IR photodetectors.