Old Web
English
Sign In
Acemap
>
Paper
>
Atomic-Scale Simulations of Electron Mobilities in Ultrathin SOI MOSFETs
Atomic-Scale Simulations of Electron Mobilities in Ultrathin SOI MOSFETs
2007
S.T. Pantelides
George Hadjisavvas
Matthew Evans
Leonidas Tsetseris
Matthieu Caussanel
Ronald D. Schrimpf
Keywords:
Mobilities
Silicon on insulator
Electron
Atomic units
Materials science
Molecular physics
Optoelectronics
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]