A Compact eFUSE Programmable Array Memory for SOI CMOS
2007
Demonstrating a >10X density increase over traditional VLSI fuse circuits, a compact eFUSE programmable array memory configured as a 4 Kb one-time programmable ROM (OTPROM) is presented using a 6.2 mum 2 NiSi x silicide electromigration ITIR cell in 65 nm SOI CMOS. A 20 mus programming time at 1.5 V is achieved by asymmetrical scaling of the fuse and a shared differential sensing scheme. Having zero process cost adder, eFUSE is fully compatible with standard VLSI manufacturing.
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