Effects of indium surfactant on growth and characteristics of (112¯2) plane AlGaN-based multiple quantum wells

High quality semi-polar  (112¯2) plane AlGaN-based multiple quantum wells (MQWs) were successfully grown on  (101¯0) m-plane sapphire substrates with metal-organic chemical vapor deposition (MOCVD) technology and the effects of indium (In) surfactant on the structural and optical properties of the AlGaN-based MQWs were investigated intensively. The characterization results revealed that the surface morphology as well as the crystalline quality for the semi-polar  (112¯2) plane AlGaN MQWs could be improved remarkably by adopting In as surfactant during the MOCVD growth process. Furthermore, the integrated MQWs-related excition emission peak intensity and the radiative recombination probabilities in MQWs could be increased as well with the help of In-surfactant, resulting an enhanced internal quantum efficiency.