Simulation, Characterization and Parameter Extraction of Radiation Hardened MOSFET

Radiation Hardened by design (RHBD) devices are used for space applications to immune from radiation effects. Here, aforementioned device characteristics of bulk RHBD device is investigated for width and length variation through device simulator. Results are compared and fitted using BSIM-BULK model through global scaling using IC-CAP. Device characteristics in terms of drain current, trans-conductance and drain conductance are evaluated at different device width and channel length. For fitting of the device characteristics, various parameters in the model are changed accordingly to cover the whole effect to form a global model card for all the mentioned devices in linear and saturation regions.