4.1: Low‐Temperature‐Processed IGZO TFTs for Flexible AMOLED with Integrated Gate Driver Circuits

We have reduced threshold voltage shift of IGZO TFTs processed at 200°C under bias-temperature stress of Vg = 20 V at 70°C for 2000 s to 0.22 V by optimizing IGZO deposition and annealing conditions. A flexible AMOLED display with integrated gate driver circuits has been demonstrated.