Growth mechanisms of C60-molecular beam epitaxy on mica

Abstract The surface morphology of heteroepitaxial C 60 -films on mica has been studied by atomic force microscopy as a function of nominal film thickness at constant substrate temperature. Irregular islands grow in the early stage until they touch each other. Coalescence then forms larger, well-oriented islands of near thermodynamical equilibrium form. The size of the islands does not increase on further deposition; rather new islands are formed. A bare mica surface between the islands shows that growth at this stage continues by a Volmer-Weber mechanism. When complete surface coverage is achieved, a continuous film with a layer-by-layer growth mechanism is observed. The films finally obtained are of single-crystal quality.