Novel GaP/GaNP core/shell nanowires for optoelectronics and photonics

GaNP-based nanowires (NWs) represent a novel material system that has a great potential in a variety of optoelectronic and photonic applications. In this paper we review our recent results showing that advantages provided by alloying with nitrogen can be realized and even further enhanced in novel coaxial GaNP NWs grown on Si substrates. Based on combined μ-photoluminescence and optically detected magnetic resonance measurements, we identify the optimum structural design of these nanowires. We also demonstrate that these novel structures have potential as nanoscale light sources of linearly polarized light.