Negative differential resistance as effect of Zn doping of chemically processed CdS thin film transistors

Abstract The performance of Thin Film Transistors (TFTs) with chemically deposited Zn-doped CdS active layers was assessed. Charge carrier traps, induced by structural distortions, were produced by the incorporation of Zn in CdS. This phenomenon was used to engineer the operation mode of these devices. The degradation of the saturation charge-carrier mobility affected the output characteristics of the TFTs, which interestingly exhibited the negative differential resistance (NDR) effect.