Methodology to achieve planar technology-like ESD performance in FINFET process
2015
Method for making Finfet ESD performance comparable to bulk planar ESD devices is demonstrated using a simple but effective process. Low FIN silicon volume compared to their counterparts in bulk planar process is compensated with the additional deep implants. The selected ESD devices in Finfet process show competitive ESD performance without any significant cost adder.
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
14
References
1
Citations
NaN
KQI