Evaluating Self-commutated Reverse Conduction Characterization of Enhancement-Mode GaN HEMT for Application

Enhancement-mode GaN switches has been developed with up to 650 V blocking capability, fast switching, and low conduction losses in commercial devices. Self-commutated reverse conduction is a very important characteristic of enhancement-mode GaN HEFT, especially for synchronous rectification topologies. This paper introduces the new commercial enhancementmode GaN HEMT and its self-commutated reverse conduction characteristic. To compare three schemes: only an eGaN, only a SiC SBD, eGaN with an anti-parallel SiC SBD respectively, a DPT circuit is designed to analyse the influence of different schemes on switching characteristics and power losses of eGaN HEMT.