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Bias dependence of gate oxide degradation of 90 nm CMOS transistors under 60 MeV proton irradiation
Bias dependence of gate oxide degradation of 90 nm CMOS transistors under 60 MeV proton irradiation
2005
David
Simoen
Claeys
Mohammadzadeh
Keywords:
Proton
Optoelectronics
gate oxide degradation
Irradiation
CMOS
Transistor
MOSFET
Materials science
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