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A 3.42 m2 Flash Memory Cell Technology Conformable to a Sector Erase
A 3.42 m2 Flash Memory Cell Technology Conformable to a Sector Erase
1991
Hitoshi Kume
Toshihiro Tanaka
Tetsuo Adachi
Nobuyoshi Miyamoto
Shunichi Saeki
Yuzuru Ohji
Masahiro Ushiyama
Takashi Kobayashi
Takeshi Nishida
Yoshifumi Kawamoto
Koichi Seki
Keywords:
Electronic engineering
Materials science
Conformable matrix
Flash memory
Correction
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