A CMOS-compatible ionic/electronic hybrid transistor based on 2D α-MoO 3

In contrast with 2D transition metal dichalcogenides, less attention was paid to 2D transition metal oxides for generally wider bandgap and low carrier concentration in stoichiometric states. Nevertheless, the layered structure of 2D transition metal oxides facilities the mechanical exfoliation and the injection of different donor ions (e.g. protons, alkali metal ions) into free spaces, which gives large density states within the bandgap. And, the dynamic process of the injected ions, which can be modulated by external voltage, closely resembles the transmission of the chemical signals in biological synapses and provides a chance to design ionic/electronic hybrid three-terminal devices based on 2D transition metal oxides to mimick artificial synapses. In this work, we fabricated a CMOS-compatible three-terminal device based on $\pmb{2\mathrm{D}\alpha-\mathrm{MoO}_{3}}$ nanoflakes (as channel material), and a solid electrolyte containing mobile Li+ (as gating dielectric). The dynamic of channel conductance and its relaxation behaviors under continual and pulsed gating voltage was investigated. We demonstrated the gating-controlled electrochemical Li+-doping is feasible to modulate the conductance of $\pmb{\alpha-\mathrm{MoO}_{3}}$ in a non-volatile and volatile way. Furthermore, the simulation of transition from short-term plasticity to long-term plasticity by the relaxation of channel conductance was implemented.