The modeling and parameters identification for IGBT based on optimization and simulation

IGBT(Insulated Gate Bipolar Transistor)is becoming more and more popular in many power applications, since it offers a good compromise between on-state loss, switching loss and easy of use. To develop circuits and systems with the devices, model and model parameters are necessary in circuit simulations. This paper presents a procedure for identifying the most important model parameters of IGBT. As an example, the results of identification for BUP302 are given.