Anomalous Hall Effect, Robust Negative Magnetoresistance, and Memory Devices Based on a Noncollinear Antiferromagnetic Metal.

Peixin Qin,Zexin Feng,Xiaorong Zhou,Huixin Guo,Jinhua Wang,Han Yan,Xiaoning Wang,Hongyu Chen,Xin Zhang,Haojiang Wu,Zengwei Zhu,Zhiqi Liu

Anomalous Hall Effect, Robust Negative Magnetoresistance, and Memory Devices Based on a Noncollinear Antiferromagnetic Metal.

2020

Peixin Qin
Zexin Feng
Xiaorong Zhou
Huixin Guo
Jinhua Wang
Han Yan
Xiaoning Wang
Hongyu Chen
Xin Zhang
Haojiang Wu
Zengwei Zhu
Zhiqi Liu

We report the successful fabrication of noncollinear antiferromagnetic D019 Mn3Ge thin films on insulating oxide substrates. The anomalous Hall effect, and the large parallel negative magnetoresist...

Keywords:

Oxide
Metal
Condensed matter physics
Thin film
Antiferromagnetism
Materials science
Hall effect
Magnetoresistance
Analytical chemistry
Fabrication

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