A Rad-Hard Bandgap Voltage Reference for High Energy Physics Experiments

This work is concerned with the characterization of a bandgap reference circuit, fabricated in a commercial 65 nm CMOS technology, designed for applications to HL-LHC experiments. Measurement results show a temperature coefficient of about 16 ppm/\(^\circ \)C over a temperature range of 140 \(^\circ \)C (from \(-40\) to 100 \(^\circ \)C) and a variation of 1.6% for V\(_{DD}\) from 1.08 to 1.32 V. The mean value of the bandgap output is about 400 mV, with a 5% maximum shift when exposed to a Total Ionizing Dose (TID) around 1 Grad (SiO\(_2\)). The power consumption is 165 \(\upmu \)W at room temperature, with a core area of 0.02835 mm\(^2\).