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Acemap > Paper > Electrical Properties and Reliability of Ultrathin HfN Gate Insulator Formed on Si(100) and Si(110) (シリコン材料・デバイス)

Electrical Properties and Reliability of Ultrathin HfN Gate Insulator Formed on Si(100) and Si(110) (シリコン材料・デバイス)

2013 
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