Organotin-containing resists (TMAR) for X-ray lithography

The newly synthesized polymers containing organotin indicate higher sensitivities (2500 mJ/cm2) to synchrotron radiation X-ray (SR X-ray). The sensitivities and the imaging types depend on the amount of tin atoms incorporated in the polymers. Their resistance of the O2 gas reactive ion etching is 50 times higher in comparison with poly(methyl methacrylate) (PMMA). The results for electron beam (EB) are also reported.