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Scaled HfO2/In0.53Ga0.47As MOSCAPs via Inserting TiN Caping Layer for III-V Low Power Device Application
Scaled HfO2/In0.53Ga0.47As MOSCAPs via Inserting TiN Caping Layer for III-V Low Power Device Application
2017
Yen-Chun Fu
Xu Li
Uthayasankaran Peralagu
Dilini Hemakumara
David Millar
M. J. Steer
Ian G. Thayne
Keywords:
Optoelectronics
Tin
Materials science
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