Voltage-control spintronics memory (VoCSM) toward development of a 4F 2 -cell with strained in-plane-MTJ

We successfully demonstrated write tests in voltage-control spintronics memory (VoCSM) in which in-plane magnetic tunnel junctions (MTJs) with aspect ratio of about 1 (AR1) were used. Retention energy as large as that in MTJs with an aspect ratio of 2.5 was stored in AR1-MTJs. We controlled the strain introduced into the AR1-MTJs to store retention energy owing to strain-induced anisotropy. Results in the write tests show the possibility of high-density VoCSM using in-plane MTJs whose cell area is as small as 4F 2 .