Structural and optical characterization of non-polar a-plane gan thin films grown on r-plane sapphire via high-temperature aln nucleation layers by metalorganic chemical vapor deposition

Non-polar A-plane GaN layers were grown on R-plane sapphire substrates using high temperature AIN nucleation layers. X-ray characterization shows improved crystalline quality for A-GaN grown by this method compared to utilizing traditional low-temperature GaN nucleation layers. Photoluminescence (PL) measurements indicate the potential of A-GaN materials for achieving high optoelectronic device quality. Standard InGaN/GaN MQW structures were grown on the above non-polar A-plane GaN bulk layers, with preliminary results showing a much lower indium concentration in the well than for C-GaN templates grown in the same run.