Light-induced E.S.R. in amorphous silicon
1979
A model for defects in hydrogenated amorphous silicon (TS > 150‡C) observed by light-induced E.S.R. is presented. It is based on a comparison with E.S.R. signals observed from irradiation defects in crystalline silicon. The magnitude of the E.S.R. signal as a function of hydrogen concentration is also discussed.
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