Analysis of Embedded-Diode Performance in MOSFET under Switching Condition

It has been measured that the I-V characteristics of the embedded diode in SiC MOSFETs shows an unexpected V gs dependence. With the use of 2D-device simulation, we have analyzed the reason for this phenomenon. It was found that a non-negligible bipolar effect is the origin. Further, a compact model has been developed to reproduce the measured V gs dependence. The model enables the prediction of this unexpected V gs dependence based on the device’s structural features.