Failure mechanism of E-FUSE for a production chip during the ESD zapping event
2017
On-chip electrical fuse (E-FUSE) with electrostatic discharge (ESD) protection scheme failure during point-to-point ESD stress has been reported and analyzed. ESD current flowing through the power bus-line and back-to-back diodes induces the potential difference between two ground domains. Thus induces activation of the control circuitry to programming mode, allowing E-FUSE as part of ESD discharge path.
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