Optically pumped Si-based edge-emitting GeSn laser
2017
We present double heterostructure GeSn edge emitting laser. The structure was grown on a Si substrate using a commercial chemical vapor deposition with GeH 4 and SnCl 4 . The lasing threshold of 68 KW/cm 2 at 10K and maximum laser operating temperature of 110 K was achieved.
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