Optical properties of a-Se90In10−x Snx chalcogenide thin films before and after gamma irradiation

Abstract Amorphous Se 90 In 10− x Sn x ( x =2, 4, 6, and 8) thin films of thickness 1000 A were prepared on glass substrates by the thermal evaporation technique. Optical parameters of the films were investigated, in the wavelength range 400–700 nm, before and after irradiation by 4, 8, and 12 kGy doses of γ-ray. The optical absorption coefficient α for as-deposited and gamma irradiated films was calculated from the reflectance R and transmittance T measurements, which were recorded at room temperature. From the knowledge of α , at different wavelengths, the optical band gap E g was calculated for all compositions of Se–In–Sn thin films before and after gamma irradiation. Results indicate that allowed indirect optical transition is predominated in as-deposited and irradiated films. Besides, it is found that the band gap decreases with increasing Sn concentration and this is attributed to the corresponding decrease in the average single bond energy of the films. The band gap, after irradiation at different doses of γ-ray, was found to decrease for all compositions of the studied films. This post-irradiation decrease in the band gap was interpreted in terms of a bond distribution model.