Statistical evaluation for trap energy level of RTS characteristics

The energy distributions of traps which cause RTS noise using the array test pattern having a large number of n-MOS and p-MOS are investigated. The more traps which cause RTS noise located near the conduction band. The phenomena in p-MOS are almost the same as n-MOS. However, the number of traps in p-MOS is less than that in n-MOS. The tendency of the energy distribution of the traps near the conduction band edge is different from that near the valence band edge.