A 78.8fJ/b/mm 12.0Gb/s/Wire Capacitively Driven On-Chip Link Over 5.6mm with an FFE-Combined Ground-Forcing Biasing Technique for DRAM Global Bus Line in 65nm CMOS.
2022
- Correction
- Cite
- Save
- Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI