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Defects Formed at InGaN/GaN and AlGaN/GaN Quantum Wells: Role of Dopants and Impurities
Defects Formed at InGaN/GaN and AlGaN/GaN Quantum Wells: Role of Dopants and Impurities
1998
Z. Liliental-Weber
S. Ruvimov
W. Swider
Yongbeom Dongj Kim
J. Washburn
Shugo Nakamura
Richard Scott Kern
Yan Chen
Joel K. W. Yang
Keywords:
Surface roughness
Impurity
Dopant
Dislocation
Transmission electron microscopy
Ceramic materials
Materials science
Quantum well
Atomic physics
Correction
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