Effect of the Thickness of the Strained Si on Hall Mobility

The strained Si layer is grown on the SiC/Si substrate by a low-pressure chemical vapor deposition (LPCVD) systern.The crystal quality of the layer is characterized by X-ray diffraction and Ramanspectroscopy.X-ray diffraction and Raman spectra of the sample indicate the Si layer is strained. The SEM image of the sample indicates there is the Si/SiC/Si structure.A high Hall mobility value of 300cm2/(V·s) (300K) is obtained in the strained Si layer，which is due to the eompressive biaxial strain in this layer.