Fabrication and some properties of ZnO/A IIIN heterojunctions

n-ZnO/p-A IIIN (A III = Ga, Al) heterojunctions have been fabricated, which exhibit relatively strong electroluminescence in the blue-violet spectral range under forward bias. It is shown that ZnO layers grown with rf-discharge activation have a less developed surface with a significant decrease in the sizes and number of zinc clusters. The current-voltage characteristics of the heterostructures obtained have rectifying properties with a cutoff voltage corresponding to the ZnO band gap.