Evidences of anodic-oxidation reset mechanism in TiN\NiO\Ni RRAM cells

By means of conductance modeling, physical characterization, and stack engineering in 80nm-wide contact-hole cells, we clearly evidence for TiN\NiO\Ni RRAM systems that the reset switching corresponds to a partial Ni-rich filament constriction due to anodic oxidation mechanism at the interface with the Ni anode