Surface photovoltage spectroscopy and normal-incidence reflectivity characterization of a 1.3 μm InGaAlAs/InP vertical-cavity surface-emitting laser structure

We have investigated a 1.3 μm InGaAlAs/InP (001) vertical-cavity surface-emitting laser (VCSEL) structure using surface photovoltage spectroscopy (SPS) and normal-incidence reflectivity. The SPS measurements were performed as a function of angle of incidence relative to the normal (0°–55°) and temperature (300 K

Keywords:

• Laser diode
• Spectroscopy
• Interference (wave propagation)
• Photocurrent
• Gallium arsenide
• Laser
• Vertical-cavity surface-emitting laser
• Nuclear magnetic resonance
• Surface photovoltage
• Analytical chemistry
• Physics
• Semiconductor laser theory
• Exciton
• Optoelectronics
• Optics

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