Voltage-controlled magnetic anisotropy in antiferromagnetic MgO-capped MnPt films

The magnetic anisotropy in MgO-capped MnPt films and its voltage control are studied using first-principles calculations. Sharp variation of the magnetic anisotropy with film thickness, especially in the Pt-terminated film, suggests that it may be widely tuned by adjusting the film thickness. In thick films the linear voltage control coefficient is 0.17 and $-0.07$ pJ/Vm for Pt-terminated and Mn-terminated interfaces, respectively, which is comparable to the Fe$\vert$MgO interface. The combination of a widely tunable magnetic anisotropy energy and a sizeable voltage-control coefficient suggest that MgO-capped MnPt films can serve as a versatile platform for magnetic memory and antiferromagnonic applications.